Early stages of oxygen precipitation in silicon /

Early stages of oxygen precipitation in silicon /

Bibliographic Details
Corporate Authors:	North Atlantic Treaty Organization Scientific Affairs Division, NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Silicon
Other Authors:	Jones, R., Ph. D
Format:	Conference Proceeding Book
Language:	English
Published:	Dordrecht ; Boston : Kluwer Academic, [1996], ©1996 Dordrecht ; Boston : c1996 Dordrecht ; Boston : [1996]
Series:	NATO ASI series High technology ; vol. 17 NATO ASI series High technology ; v. 17. NATO ASI series High technology ; vol. 17.
Subjects:	Semiconductors > Defects > Congresses Semiconductors > Defects Silicon crystals > Defects > Congresses Silicon > Oxygen content > Congresses Silicon crystals Silicon crystals > Defects Silicon Conference papers and proceedings

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Stanford University

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